Color centers in silicon carbide have increasingly attracted attention inrecent years owing to their excellent properties such as single photonemission, good photostability, and long spin coherence time even at roomtemperature. As compared to diamond which is widely used for holdingNitrogen-vacancy centers, SiC has the advantage in terms of large-scale,high-quality and low cost growth, as well as advanced fabrication technique inoptoelectronics, leading to the prospects for large scale quantum engineering.In this paper, we report experimental demonstration of the generation ofnanoscale $V_{Si}$ single defect array through ion implantation without theneed of annealing. $V_{Si}$ defects are generated in pre-determined locationswith resolution of tens of nanometers. This can help in integrating $V_{Si}$defects with the photonic structures which, in turn, can improve the emissionand collection efficiency of $V_{Si}$ defects when it is used in spin photonicquantum network. On the other hand, the defects are shallow and they aregenerated $\sim 40nm$ below the surface which can serve as critical resourcesin quantum sensing application.
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